Publications [#66355] of Nan M. Jokerst

Papers Published

1. Augustine, G. and Rohatgi, A. and Jokerst, N.M. and Dhere, R., Concentration-dependent near and above band edge absorption in doped InP and its effect on solar cell modeling, Journal of Applied Physics, vol. 78 no. 4 (1995), pp. 2666 - 2670 [1.360128]
   (last updated on 2007/04/16)

   Abstract:
   Absorption coefficients in the energy range of 1.8-3.0 eV were obtained using extremely thin InP samples that were fabricated and bonded to glass substrates, whereas samples with thickness in the range of 0.5-0.9 μm were found to be optimum for measurements in the lower energy range of 1.3-1.6 eV. A large doping dependence of absorption coefficients was observed for energies below 1.6 eV. Model calculations showed that the use of accurate doping dependent absorption coefficients can result in significant improvement in the predicted internal quantum efficiency and device performance.

   Keywords:
   Absorption spectroscopy;Solar cells;Semiconductor doping;Mathematical models;Quantum efficiency;Light transmission;Thin films;Carrier concentration;Glass;Electron transitions;Etching;Zinc;