Publications [#66371] of Nan M. Jokerst

Papers Published

1. Camperi-Ginestet, C. and Kim, Y. W. and Jokerst, N. M. and Allen, M. G. and Brooke, M. A., Vertical electrical interconnection of compound semiconductor thin-film devices to underlying silicon circuitry, IEEE Photonics Technology Letters, vol. 4 no. 9 (1992), pp. 1003 - 1006 [68.157129]
   (last updated on 2007/04/16)

   Abstract:
   A three-dimensional integration technology that electrically connects an independently optimized thin-film device layer to a Si circuitry layer is reported. An epitaxial liftoff GaAs thin-film optical detector is integrated directly on top of Si amplifier circuitry with a planarizing, insulating layer of polyimide between the detector and the circuitry. The detector is virtually connected to the circuitry below through an electrical via in the insulator. This integration technology enables monolithic, massively parallel vertical interconnection between two independently optimized device layers. Systems such as image processing arrays should significantly benefit from this massively parallel integration technology.

   Keywords:
   Semiconductor devices;Semiconducting silicon;Thin films;Semiconducting gallium arsenide;Polyimides;