Publications [#66385] of Nan M. Jokerst

Papers Published

1. Cha, Cheolung and Kim, Jae Hong and Huang, Zhaoran and Jokerst, Nan M. and Brooke, Martin A., Improved measurement-based modeling of inverted-MSM photodetectors using on-wafer calibration structures, Proceedings of SPIE - The International Society for Optical Engineering, vol. 5353 (2004), pp. 89 - 96, San Jose, CA, United States [12.531640]
   (last updated on 2007/04/16)

   Abstract:
   Photodetectors (PDs) are an important active device in optoelectronic integrated circuits (OEICs), and, for shorter haul interconnections where circuit (e.g. transimpedance amplifier (TIA)) noise may be the dominant noise in receivers, metal-semiconductor-metal photodiodes (MSM PDs) are attractive due to their low capacitance per unit area compared to PIN photodetectors and the ease of monolithic integration with field effect transistors (FETs). Inverted-MSM PDs (I-MSM PDs), which are thin film MSM PDs with the fingers on the bottom of the device, have demonstrated higher responsivities compared to conventional MSM PDs while maintaining small capacitance per unit area, low dark current ( [similar to] nA), and high speed. However, the modeling of MSM PDs and I-MSM PDs for insertion into circuit simulators for integrated PD/TIA modeling has not been reported. In this paper, an accurate high-frequency equivalent circuit-level model of thin film I-MSM PDs is obtained using an on-wafer measurement-based modeling technique. This circuit-level model of MSM PDs can be used for capacitance sensitive preamplifier design for co-optimization with widely used simulators. (ADS and HSPICE). The obtained circuit-level model shows good agreement with measured s-parameters.

   Keywords:
   Optoelectronic devices;Integrated optoelectronics;Interconnection networks;Integrated circuits;Scattering parameters;Photodiodes;Field effect transistors;Thin film circuits;WSI circuits;Calibration;Local area networks;Capacitance;