This paper reports the integration of an 8 × 8 array of thin-film GaAs-AlGaAs photodetectors onto a silicon-oscillator array circuit for massively parallel-image processing applications. Each detector was electrically connected to the oscillator below it using vertical electrical interconnections. Both sides of the thin-film devices were metallized for electrical contact, which minimized the interconnection density on the silicon circuit, thereby maximizing the available signal processing area. The yield of this integrated array and associated circuit was 100%, with the majority of pixels demonstrating a dynamic range of 50 dB.
Photodetectors;Thin films;Semiconducting silicon;Semiconducting gallium arsenide;Semiconducting aluminum compounds;Image processing;Oscillators (electronic);Electric contacts;Signal processing;Three dimensional;Semiconductor device manufacture;Substrates;