Publications [#66481] of Nan M. Jokerst

Papers Published

1. Kohl, P.A. and Twyford, E.J. and Carter, C.A. and Jokerst, N.M., The influence of aluminum concentration on photoelectrochemical etching of first order gratings in GaAs/AlGaAs, Proceedings of the Symposium on Wide Bandgap Semiconductors and Devices and the Twenty-Third State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIII) (1995), pp. 307 - 15, Chicago, IL, USA
   (last updated on 2007/04/16)

   Abstract:
   The spatial resolution of grating etched in Al_0.3Ga_0.7As is as much as three times greater than the spatial resolution of gratings etched in GaAs. The smallest period is about 0.3 μm making the fabrication of first order gratings for waveguide couplers feasible. This enhancement in resolution is attributed to the hole mobility

   Keywords:
   aluminium compounds;diffraction gratings;etching;gallium arsenide;hole mobility;III-V semiconductors;photoelectrochemistry;stoichiometry;surface chemistry;surface topography;