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Pratt School of Engineering
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Publications [#66557] of Nan M. Jokerst

Papers Published

  1. Hargis, M.C. and Carnahan, R.E. and Brown, J.S. and Jokerst, N.M., Epitaxial lift-off GaAs/AlGaAs metal-semiconductor-metal photodetectors with back passivation, IEEE Photonics Technology Letters, vol. 5 no. 10 (1993), pp. 1210 - 1212 [68.248430]
    (last updated on 2007/04/16)

    Abstract:
    High-performance thin-film epitaxial lift-off (ELO) photodetectors have potential for integration with independently optimized integrated circuits and waveguides. In this paper, the dark current, responsivity, and frequency response of GaAs/AlGaAs metal-semiconductor-metal (MSM) photodetectors that remain on the growth substrate are compared to ELO detectors with and without back passivation. The passivated ELO detectors perform comparably to the on-wafer devices, while the unpassivated devices exhibit performance degradation. In addition to demonstrating the importance of back passivation, this paper presents the lowest ELO MSM dark current (5 nA at 5 V) for a 200-μm-diameter device published to date.

    Keywords:
    Semiconductor device structures;Thin film devices;Semiconducting gallium arsenide;Semiconducting aluminum compounds;Electric currents;Frequency response;Substrates;Epitaxial growth;Passivation;Fabrication;Performance;


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