Publications [#66566] of Nan M. Jokerst

Papers Published

1. Vendier, O. and Jokerst, N.M. and Leavitt, R.P., High efficiency thin-film GaAs-based MSM photodetectors, Electronics Letters, vol. 32 no. 4 (1996), pp. 394 - 395 [el:19960231]
   (last updated on 2007/04/16)

   Abstract:
   To increase the sensitivity of high speed GaAs based metal-semiconductor-metal (MSM) photodetectors, thin film inverted MSMs (fingers on the bottom) have been fabricated and compared to bulk MSMs. The inverted MSMs exhibit a record 95% external quantum efficiency, a bandwidth of 5.9GHz, and <5nA dark current at 10V bias.

   Keywords:
   Semiconducting gallium arsenide;Thin films;Quantum efficiency;Electric currents;Current voltage characteristics;Semiconducting aluminum compounds;Semiconductor device manufacture;Epitaxial growth;Chemical vapor deposition;Optical coatings;Substrates;Antireflection coatings;