Publications [#65286] of Tomoyuki Yoshie

Papers Published

  1. Yoshie, T. and Hishida, Y. and Yagi, K. and Yodoshi, K. and Niina, T., Molecular beam epitaxy of p-type ZnSe by N2-gas doping, Blue Laser and Light Emitting Diodes (1996), pp. 172 - 5, Chiba, Japan
    (last updated on 2007/04/16)

    Abstract:
    The characteristics of ZnSe:N grown by N2-gas doping were studied. Low-resistivity p-type ZnSe epilayers grown by N2-gas doping were found to have good crystallinity from X-ray diffractometry. We obtained p-type ZnSe:N with a net acceptor concentration (Na-Nd) from 3×1015 to 2×1017 cm-3, in which the reflection high energy electron diffraction pattern remained streaky during growth. The incorporation of nitrogen is considered to be controlled by the sticking of impinging N2 molecules. An epilayer with the Na-Nd of 2×1017 cm-3 contained a nitrogen concentration of 2×1017 cm-3. This fact implies that nitrogen incorporated into ZnSe:N by N2-gas doping effectively becomes an acceptor. Moreover, it was found that nitrogen concentration for ZnSe:N which was grown above the N2 pressure of 2×10-4 Torr reaches up to values in the low range of 1020 cm-3

    Keywords:
    II-VI semiconductors;molecular beam epitaxial growth;nitrogen;reflection high energy electron diffraction;semiconductor doping;semiconductor epitaxial layers;semiconductor growth;wide band gap semiconductors;X-ray diffraction;zinc compounds;