- Zimmermann, H. and Cocks, F.H. and Gosele, U., Observation of light-induced current from a porous silicon device,
Mater. Chem. Phys. (Switzerland), vol. 32 no. 3
pp. 310 - 14 [0254-0584(92)90216-U] .
(last updated on 2007/04/10)
The wavelength dependence of the photocurrent from the porous silicon compared to the photoluminescence spectrum. A high-concentration phosphorus profile between a metal layer and a layer of p-type porous silicon is used to form an electrical contact to the porous p-type silicon. The phosphorus profile results in a n-type porous layer and in a p/n-junction in the porous silicon. The resulting n+/p-structure possesses a much lower electrical resistance than a metal contact directly on p-type porous silicon. The current voltage characteristic of the device shows ohmic current limitation
elemental semiconductors;luminescence of inorganic solids;p-n homojunctions;phosphorus;photoconductivity;photoluminescence;porous materials;silicon;