Papers Published

1. Cocks, F.H. and Scharman, A.J. and Jones, P.L. and Cogan, S.F., Hydrogenated amorphous-silicon thin films produced by ion plating, Appl. Phys. Lett. (USA), vol. 36 no. 11 (1980), pp. 909 - 10 [1.91363] .
   (last updated on 2007/04/10)

   Abstract:
   Ion plating techniques have been used to produce amorphous-silicon thin films which contain up to 25 atomic percent hydrogen. The Si-H bond stretching mode observed for hydrogenated amorphous-silicon thin films produced by glow-discharge decomposition methods is also observed for these ion-plated films. Optical absorptivity measurements for ion-plated films give band-gap values between 1.58 and 1.90 eV

   Keywords:
   amorphous semiconductors;electron energy states of amorphous solids;elemental semiconductors;energy gap;hydrogen;impurity and defect absorption spectra of inorganic solids;infrared spectra of inorganic solids;ion plating;semiconductor growth;semiconductor thin films;silicon;