- Cocks, F.H. and Peterson, M.J., Tellurium and selenium selective absorber thin films produced by gas-evaporation methods,
J. Vac. Sci. Technol. (USA), vol. 16 no. 5
pp. 1560 - 3 [1.570248] .
(last updated on 2007/04/10)
The production of Te and Se thin films by evaporation carried out under pressures of argon gas ranging from 1 atm to 0.1 Torr have been studied and the selective absorption characteristics of the resultant Te and Se films determined. Absorptivities (a) in excess of 97% have been observed in Te films deposited in 1 Torr of argon. Absorptivities of gas evaporated Se films did not arise above 60%. Emissivities (e) of Se films were also high, over 20%. Emissivities of Te thin films were less than 10% in most instances. Maximum a/e values of 12:1 were obtained for Te films deposited at an argon pressure of 10 Torr
elemental semiconductors;emissivity;selenium;semiconductor thin films;solar absorber-convertors;tellurium;vapour deposited coatings;