- Jones, P.L. and Korhonen, A.S. and Dimmey, L.J. and Cocks, F.H. and Pollock, J.T.A., Elimination of residual stress in hydrogenated amorphous silicon films,
Mater. Sci. Eng. (Switzerland), vol. 52 no. 2
pp. 181 - 5 [0025-5416(82)90047-7] .
(last updated on 2007/04/10)
Residual stresses were measured in hydrogenated amorphous silicon films produced by glow discharge decomposition of silane and deposited onto aluminum, Invar (36Ni-64Fe), copper and nickel substrates. The substrate temperatures were in the range 54-295°C during deposition. For low deposition temperatures, all films irrespective of substrate exhibited compressive room temperature residual stresses ranging from -60 to -120 mPa. A major fraction of this residual stress is found to come from the intrinsic deposition stress, which has complex origins relating to deposition and substrate conditions. With aluminum substrates, increasing the deposition temperature increased the compressive residual stress, primarily because of the difference between the thermal expansion coefficients of silicon and aluminum
amorphous semiconductors;elemental semiconductors;hydrogen;internal stresses;semiconductor thin films;silicon;