- Schaffer, J.P. and Lind, J.H. and Jones, P.L. and Cocks, F.H., Photoconductivity of ion-plated amorphous hydrogenated silicon,
Phys. Status Solidi A (East Germany), vol. 71 no. 1
pp. 111 - 15 .
(last updated on 2007/04/10)
The authors consider a-Si:H films produced, not by glow discharge decomposition of silane, but by ion-plating, which involves the evaporation of the deposition material, silicon (99.9999%) through a plasma, in this case a plasma of hydrogen. The optical band gap and the photoresponse as a function of both intensity of illumination and incident photon energy has been studied
amorphous semiconductors;elemental semiconductors;energy gap;hydrogen;photoconductivity;plasma deposited coatings;semiconductor thin films;silicon;