- Zalph, B.L. and Dimmey, L.J. and Park, H. and Jones, P.L. and Cocks, F.H., Hydrogenated amorphous boron: resistivity and doping behavior,
Phys. Status Solidi A (East Germany), vol. 62 no. 2
pp. 185 - 8 .
(last updated on 2007/04/10)
By analogy with a-Si:H results, it has been suggested that hydrogen incorporation in amorphous boron (a-B) films may similarly render such films sensitive to doping effects by reducing the density of defect states in the mobility gap (F.H. Cocks et al., 1980). Results are presented of electrical resistivity measurements on a-B:H films prepared by glow discharge decomposition of diborane (B2H6) with and without the intentional addition of dopants. Doping was performed by metering silane (SiH4) into the glow for silicon doping or ethylene (C2H4) for carbon doping. Films were deposited onto heated substrates at temperatures of 150, 250, and 350°C. The greatest dopant sensitivity was achieved in the 350°C materials. The electrical resistivity of the a-B:H films was more strongly influenced by Si additions than by C additions
boron;carbon;electrical conductivity of amorphous semiconductors and insulators;elemental semiconductors;hydrogen;plasma deposited coatings;semiconductor doping;semiconductor thin films;silicon;