Papers Published

1. Dimmey, L.J. and Park, H. and Jones, P.L. and Cocks, F.H., The optical band gap of hydrogenated amorphous boron thin films: The effect of substrate temperature, J. Electron. Mater. (USA), vol. 10 no. 1 (1981), pp. 111 - 17 .
   (last updated on 2007/04/10)

   Abstract:
   Hydrogenated amorphous boron thin films have been produced on quartz substrates heated to 150, 250, and 350°C by the glow discharge decomposition of a gas mixture of 5 v/o B₂H₆ and 95 v/o H₂. The absorption coefficients as a function of wavelength across the visible spectrum and the concomitant optical band gaps of all films were measured. The optical band gaps of the films produced at 150 and 250°C were approximately 2.1 eV while those films produced at 250°C showed band gaps between 1.6 and 1.4 eV. These results indicate that it is possible to optimize theoretical photovoltaic conversion efficiencies of solar cells based on hydrogenated amorphous boron thin films produced by glow discharge methods through the tailoring of the optical band gap by control of substrate temperature

   Keywords:
   amorphous semiconductors;boron;elemental semiconductors;energy gap;hydrogen;semiconductor thin films;solar cells;visible and ultraviolet spectra of inorganic solids;