Papers Published

  1. Hacker, H., Jr. and Dimmey, L.J. and Jones, P.L. and Cocks, F.H., Electron spin resonance studies of hydrogenated amorphous boron (a-B:H), J. Non-Cryst. Solids (Netherlands), vol. 48 no. 2-3 (1982), pp. 291 - 6 [0022-3093(82)90166-1] .
    (last updated on 2007/04/10)

    Abstract:
    The electron spin resonance of hydrogenated amorphous boron produced by the direct current glow discharge of diborane in hydrogen was studied and the effects of annealing on the signal intensity and linewidth are reported. The resonance in the unannealed sample indicated a composite line arising from two centers, one of which predominates at room temperature. The predominate line has a g-factor of 2.083 and a peak-to-peak linewidth of 130 G which is essentially independent of temperature below 25°C. From the low temperature behavior of the linewidth the authors estimate the spin-spin relaxation time to be 5×10-10 s. At higher temperatures Raman processes seem to dominate since the spin-lattice relaxation time varies as T-2

    Keywords:
    amorphous semiconductors;annealing;boron;electron spin-lattice relaxation;elemental semiconductors;EPR line breadth;hydrogen;paramagnetic resonance of defects;plasma deposited coatings;spin-spin relaxation;