- Thorgersen, P.P. and Cocks, F.H. and Pollock, J.T.A. and Jones, P.L., Germanium selective solar absorber surfaces,
J. Mater. Sci. (UK), vol. 17 no. 5
pp. 1377 - 80 .
(last updated on 2007/04/10)
Thin Ge films, produced by evaporation through 0.3, 1 and 3 torr pressures of argon onto polished aluminum substrates were found to exhibit selective absorption behaviour. Maximum absorptance to emittance ratios of 13:1 were measured, with values of 8:1 for films having solar absorptances of 0.9. Film structures were significant in determining collection efficiency. Films deposited at 0.3 torr showed better overall properties due to a larger particle size of about 1 μm compared with an approximate 0.1 μm size measured with films deposited at 1 and 3 torr
germanium;semiconductor thin films;solar absorber-convertors;