- Liu, J. and Zhirnov, V.V. and Myers, A.F. and Wojak, G.J. and Choi, W.B. and Hren, J.J. and Wolter, S.D. and McClure, M.T. and Stoner, B.R. and Glass, J.T., Field emission characteristics of diamond coated silicon field emitters,
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, vol. 13 no. 2
pp. 422 - 426 [1.587961] .
(last updated on 2007/04/17)
Single crystal silicon field emitters have been modified by surface deposition of diamond using bias-enhanced microwave plasma chemical vapor deposition. Polycrystalline diamond with a high nucleation density (1010/cm2) and small grain size (<20 nm) was achieved on silicon field emitters. Field emission from these diamond coated emitters exhibited significant enhancement both in total emission current and stability compared to pure silicon emitters. A large effective emitting area comparable to the tip surface area was obtained from a Fowler-Nordheim analysis. The effective work function of the polycrystalline diamond coated emitter surface was found to be larger than that of a pure silicon emitter surface.
Semiconducting silicon;Chemical vapor deposition;Semiconducting diamonds;Polycrystalline materials;Scanning electron microscopy;Grain size and shape;Stability;Nucleation;Single crystals;