Papers Published

  1. Kong, H.S. and Edmond, J.A. and Palmour, J.W. and Glass, J.T. and Davis, R.F., Epitaxial growth, high temperature ion implantation and MOSFET fabrication in monocrystalline β-SiC thin films, Amorphous and Crystalline Silicon Carbide and Related Materials. Proceedings of the First International Conference (1989), pp. 180 - 5 .
    (last updated on 2007/04/17)

    High purity β-SiC films have been epitaxially grown on Si(100) and α-SiC(0001) at 1633 K-1823 K and 0.1 MPa using SiH4 and C2H4 carried in H2. Films grown on the on-axis Si(100) contained substantial concentrations of dislocations, stacking faults and antiphase boundaries; those deposited on α-SiC(0001) contained primarily double positioning boundaries. These boundaries were eliminated by using off-axis orientations of the respective substrates. Films produced on Si(100) have also been doped via high temperature ion implantation with Al (p-type) and N (n-type). Transmission electron microscopy analysis showed a markedly reduced defect and precipitate concentration relative to that observed in similar research at the lower temperatures. MOSFET devices have been fabricated and their current-voltage characteristics measured from 298 to 923 K. Transconductances as high as 11.90 mS/mm were achieved

    antiphase boundaries;dislocations;insulated gate field effect transistors;ion implantation;precipitation;semiconductor epitaxial layers;semiconductor growth;semiconductor materials;silicon compounds;stacking faults;transmission electron microscope examination of materials;vapour phase epitaxial growth;