- McClure, Michael T. and von Windheim, Josko A. and Glass, Jeffrey T. and Prater, John T., Effect of native SiO2 layer on the nucleation of diamond using a combustion flame,
Diamond and Related Materials, vol. 3 no. 3
pp. 239 - 244 [0925-9635(94)90086-8] .
(last updated on 2007/04/17)
The effect of native oxide thickness on the nucleation of diamond was investigated. The initial thickness of the native oxide on Si substrates was varied using three surface treatment methods: ultrasonic scratching, HF acid etching, and a combination of the two. The oxide layer was also modified during the experiment by using a low O2:C2H2 ratio pregrowth treatment (Rf=0.93, d=15 mm). The use of HF acid eliminated the oxide layer within the detectable limits of the X-ray photoelectron spectroscopy analysis (about 3 Angstrom). A low gas ratio pregrowth treatment process (oxygen-to-acetylene ratio rf, set to 0.93) meant that diamond crystals were formed after 30 s and a complete film in the center of the deposition area after 180s. The low gas ratio pregrowth treatment suppressed the formation of the oxide layer relative to standard growth conditions (Rf=0.97, d=10 mm). However, it was determined that despite this low gas ratio treatment SiO2 formation was possible inside the acetylene feather.
Thin films;Surface treatment;Etching;Crystals;Crystal growth;