- Yu, Cheng Wang and Hua, Shuang Kong and Glass, Jeffrey T. and Davis, Robert F. and More, Karren L., Effect of substrate orientation on interfacial and bulk character of chemically vapor deposited monocrystalline silicon carbide thin films,
Journal of the American Ceramic Society, vol. 73 no. 5
pp. 1289 - 1296 .
(last updated on 2007/04/17)
Epitaxial growth via chemical vapor deposition of monocrystalline films of β-SiC on Si (100) and 6H-SiC 0001 substrates and 6H-SiC on vicinal 6H-SiC 0001 substrates have been conducted. High concentrations of stacking faults, microtwins, and inversion domain boundaries were produced in films grown directly on Si (100) as a result of a lattice parameter difference of approximately equals 20% and the presence of single (or odd number) atomic steps on the substrate surface. Growth on Si (100) oriented 3DGR to 4DGR toward  completely eliminated the IDBs (but not the other defects) due to the preferential formation of double steps with dimerization axes on the upper terraces parallel to the step edges. Growth of β-SiC films on 6H 0001 lowered the density of all defects but resulted in the formation of a new defect, namely, double positioning boundaries. The latter were eliminated by using 6H 0001 oriented 3° toward [112 over-bar 0]. The defect density in these last films, relative to those grown on on-axis Si (100), was reduced substantially (to approximately equals 105 cm/cm3). However, the resulting film was 6H-SiC. Significant improvements in electrical properties of simple devices were obtained as the defect density was progressively decreased.
Ceramic Materials - Chemical Vapor Deposition;Crystals - Epitaxial Growth;Semiconducting Silicon - Coatings;Microscopic Examination - Transmission Electron Microscopy;Films - Defects;