Papers Published

  1. Kobashi, K. and Nakaue, A. and Glass, J. T. and Buckleygolder, I. M., PROPERTIES AND APPLICATIONS OF VAPOR GROWN DIAMOND, Carbon, vol. 28 no. 6 (1990), pp. 756--757 .
    (last updated on 2012/07/09)

    Abstract:
    Among many possible applications of vapor grown diamond, it is widely believed that the area of electronic devices will be the largest market within a decade. This is because diamond has many unique properties such as resistance to high temperatures, radiation and chemicals as well as its wide band gap. These are properties which are far superior to other materials, so that diamond devices will open up new application areas which would not be attained by electronic devices made from existing materials. The areas necessary to be studied for fabricating diamond electronic devices are as follows: (1) film morphology, oriented growth and growth process, (2) defect structures, (3) synthesis of p and n-type diamond, (4) formation of metallic electrodes on diamond films and its electronic characterization, and the metal/diamond interface phenomena, (5) deposition of insulating films, (6) formation of hetero-junction and their electronic characterization, (7) planar technology, (8) selective deposition, (9) anisotropic etching, (10) device design, (11) heteroepitaxy, and finally (12) large area, uniform deposition methods. The presentation covers the following three topics: synthesis of diamond films by microwave plasma chemical vapor deposition (MPCVD) using a mixture of methane, hydrogen and oxygen; selective deposition of diamond; and patterning of diamond films by electron-beam assisted plasma etching (EBAPE) developed by Kobe Steel.

    Keywords:
    Films--Thin Films;Crystals--Growing;Semiconductor Devices;