Papers Published

  1. McClure, M.T. and Wolter, S.D. and Glass, J.T. and Stoner, B.R., Titanium as a potential heteroepitaxial substrate for diamond, Proceedings of the Fourth International Symposium on Diamond Materials (1995), pp. 124 - 9 .
    (last updated on 2007/04/17)

    For diamond's unique electrical properties to be used to their fullest, single crystal diamond films must be produced to eliminate the electronic barriers of grain boundaries and randomly oriented grains. The lack of two-dimensional growth of diamond on foreign substrates illustrates the need for materials that can serve as heteroepitaxial substrates for CVD deposition of diamond to produce single crystal diamond. Two advances in the study of diamond nucleation offer potential in the search for suitable heteroepitaxial substrate candidates. The first is work by Stoner et al. Demonstrating that the bias-enhanced nucleation technique (BEN) can produce highly oriented diamond particles on β-SiC and Si.[1, 2] The second is work by Wolter et al. Reporting that the same BEN technique on certain refractory metals can achieve similar diamond nucleation densities compared to Si.[3] However, the work by Welter et al. Indicated that the refractory metals displayed a long incubation time before the onset of significant diamond nucleation due to the formation of a carbide layer several microns thick. This work investigated the diamond nucleation characteristics of thin titanium films on polycrystalline copper substrates and the heteroepitaxial potential of single crystal TiC (111) substrates

    chemical vapour deposition;diamond;elemental semiconductors;semiconductor growth;semiconductor thin films;