- Kong, H. and Kim, H.J. and Edmond, J.A. and Palmour, J.W. and Ryu, J. and Carter, C.H., Jr. and Glass, J.T. and Davis, R.F., Growth, doping, device development and characterization of CVD beta-SiC epilayers on Si(100) and alpha-SiC(0001),
Novel Refractory Semiconductors Symposium
pp. 223 - 45 .
(last updated on 2007/04/17)
Monocrystalline β-SiC films have been chemically vapor deposited on Si(100) and a α-SiC(0001) at 1660 K-1823 K and 0.1 MPa using SiH4 and C2H4 carried in H2. Films grown directly on Si(100) contained substantial concentrations of dislocations, stacking faults and antiphase boundaries (APB); those on α-SiC(0001) contained double positioning boundaries. Both the APBs and the double positioning boundaries were eliminated by using off-axis orientations of the respective substrates. Films produced on Si(100) have also been doped during growth and via ion implantation with B or Al (p-type) or P or N (n-type) at LN, room and elevated temperatures. Results from the former procedure showed the ionized dopant/total dopant concentration ratios for N, P, B and Al to be 0.1, 0.2, 0.002 and 0.01, respectively. The solubility limits of N, P and B at 1660 K were determined to be ~2E20, 1E18 and 8E18 cm-3, respectively; that of Al exceeds 2E19 cm-3. High temperature ion implantation coupled with dynamic and post annealing resulted in a markedly reduced defect concentration relative to that observed in similar research at the lower temperatures. Schottky diodes, p-n junctions, and MOSFET devices have been fabricated. The p-n junctions have the characteristics of insulators containing free carriers and deep level traps. The MOSFETs show very good I-V characteristics up to 673 K, but have not been optimized
annealing;antiphase boundaries;dislocations;insulated gate field effect transistors;ion implantation;p-n homojunctions;Schottky-barrier diodes;semiconductor doping;semiconductor growth;semiconductor materials;silicon compounds;solid solubility;stacking faults;vapour phase epitaxial growth;