- Buckleygolder, I. M. and Chalker, P. R. and Glass, J. T. and Kobashi, K. and Nakaue, A., DETERMINATION OF IMPURITY DOPANT DISTRIBUTIONS IN DIAMOND FILMS BY SIMS,
Carbon, vol. 28 no. 6
pp. 801--801 .
(last updated on 2012/07/09)
Extensive research is focused towards the fabrication of conducting diamond films prepared by CVD and in understanding the electronic properties of these materials. A prerequisite for determining these fundamental properties is knowledge of the impurity dopant distributions within these films. Secondary ion mass spectrometry (SIMS) is an analytical technique capable of high sensitivity (ppm) and high spatial resolution (50nm) of impurity dopants. Conventional profiles of impurity distributions as a function of depth within the films frequently indicate the presence of hydrogen and oxygen as well as other contaminants. When films are deposited on alumina substrates, the depth profiles indicate the presence of aluminium, apparently throughout the films. To determine whether the aluminium distribution arises from the exposed substrate via pin-holes or if it actually exists within the films, high spatial resolution imaging SIMS has been used to investigate the impurities. The results indicate that the impurity aluminium is incorporated within the films and that the role of the substrate may be influential in determining the process requirements for depositing controllable semiconducting diamond films.
Semiconducting Diamonds--Impurities;Semiconducting Films--Impurities;Spectroscopic Analysis;