Papers Published

  1. Wang, X.H. and Ma, G.-H.M. and Wei Zhu and Glass, J.T. and Bergman, L. and Turner, K.F. and Nemanich, R.J., Effects of boron doping on the surface morphology and structural imperfections of diamond films, Diam. Relat. Mater. (Netherlands), vol. 1 no. 7 (1992), pp. 828 - 35 [0925-9635(92)90109-2] .
    (last updated on 2007/04/17)

    The paper reports the surface morphology and structural imperfection of boron-doped diamond films prepared by microwave plasma enhanced chemical vapor deposition. It was found that boron dopants improved the structural quality of diamond films. The surface morphology consisted mainly of the 111 facets. A significant enhancement of nucleation density and consequent decrease of grain size was observed with the addition of diborane in the gas phase. Raman spectroscopy indicated that, with the introduction of boron dopants, the integrated intensity of the diamond peak at 1332 cm-1 increased relative to the intensity of the non-diamond peak at about 1500 cm-1, and the full-width at half maximum of the 1332 cm-1 peak decreased. In addition, the 1.681 eV (738 nm) photoluminescence peak related to point defects was effectively reduced, or even eliminated by the boron dopants. Finally, transmission electron microscopy studies found that the densities of planar defects (mainly stacking faults and microtwins) also decreased with the boron addition

    boron;diamond;plasma CVD coatings;point defects;Raman spectra of inorganic solids;semiconductor doping;semiconductor thin films;stacking faults;surface structure;transmission electron microscope examination of materials;twinning;