Papers Published

  1. More, Karren L. and Hua, Shuang Kong and Glass, Jeffrey T. and Davis, Robert F., Electron microscopy of defects in epitaxical β-SiC thin films grown on silicon and carbon 0001 faces of α-SiC substrates, Journal of the American Ceramic Society, vol. 73 no. 5 (1990), pp. 1283 - 1288 .
    (last updated on 2007/04/17)

    Defects present in β-SiC thin films epitaxically grown on hexagonal 6H α-SiC substrates via chemical vapor deposition have been characterized by transmission electron microscopy. These defects are different from those previously observed in β-SiC films grown on (100) silicon, which were predominantly stacking faults and microtwins. The most common defects in the films grown on α-SiC were large domains rotated 60° with respect to each other and were identified as double positioning boundaries. These boundaries are a special type of incoherent twin boundary. Differences observed in films grown on either the silicon or carbon face of the 0001 α-SiC are characterized as a function of the mechanism of formation of the defects and type of substrate used for growth.

    Ceramic Materials - Chemical Vapor Deposition;Crystals - Epitaxial Growth;Semiconducting Silicon - Coatings;Microscopic Examination - Transmission Electron Microscopy;Films - Defects;