Papers Published

  1. Fenner, D.B. and Li, Q. and Morrison, P.W. and Cosgrove, J. and Lynds, L. and Johansson, M.E. and Stoner, B.R. and Glass, J.T. and Xu, P. and Zhang, H., Pulsed laser deposition of CdTe, HgCdTe, and β-SiC thin films on silicon, Materials Modification by Energetic Atoms and Ions Symposium (1992), pp. 235 - 40 .
    (last updated on 2007/04/17)

    The successful methods for laser ablation and deposition of epitaxial thin films of metal oxides, especially the high-temperature superconductors (HTSC), have been adapted to pulsed laser deposition (PLD) of the narrow-band compound semiconductor HgCdTe, and the wide-band semiconductor β-SiC. Useful film quality is readily obtained in both cases: the HgCdTe films on CdTe wafers function in IR photodetection and the β-SiC is epitaxial on both Si(100) and (111) wafers

    cadmium compounds;II-VI semiconductors;mercury compounds;pulsed laser deposition;semiconductor epitaxial layers;semiconductor growth;semiconductor materials;silicon compounds;vapour phase epitaxial growth;