Papers Published

  1. Kim, H.J. and Kong, H. and Edmond, J.A. and Ryu, J. and Palmour, J. and Carter, C.H., Jr. and Glass, J.T. and Davis, R.F., Epitaxial growth, doping, and analytical characterization of monocrystalline beta-SiC semiconductor thin films, J. Vac. Sci. Technol. A, Vac. Surf. Films (USA), vol. 6 no. 3 (1988), pp. 1954 - 6 [1.575214] .
    (last updated on 2007/04/17)

    Summary form only given. The authors discuss growth of epitaxial films of β-SiC on high resistivity substrates, using chemical vapour deposition. They study the defects and effects of doping, and manufacture Schottky diodes

    crystal defects;Schottky effect;semiconductor doping;semiconductor epitaxial layers;semiconductor growth;semiconductor materials;silicon compounds;vapour phase epitaxial growth;