Papers Published

  1. Edmond, J. A. and Ryu, J. and Glass, J. T. and Davis, R. F., ELECTRICAL CONTACTS TO BETA SILICON CARBIDE THIN FILMS., Journal of the Electrochemical Society, vol. 135 no. 2 (1988), pp. 359 - 362 .
    (last updated on 2007/04/17)

    Ohmic and rectifying electrical contacts to n- or p-type semiconducting beta -SiC thin films were developed and characterized. Upon annealing for 300s at 1523 K, Ni, Au-Ta, and Cr were ohmic on n-type material. TaSi//2, similarly heated to 1123 K, and as-deposited Al also showed ohmic character. TaSi//2 had the lowest room-temperature contact resistivity of 2. 0 multiplied by 10** minus **2 OMEGA -cm**2. For p-type beta -SiC, Al-TaSi//2 annealed for 1800s at 1473 K and Al annealed for 180s at 1150 K exhibited ohmic behavior. Al was the better of the two, having a room temperature contact resistivity of 3. 1 multiplied by 10** minus **2 OMEGA -cm**2. High-temperature measurements of Al and TaSi//2 contacts showed that these contacts are stable during electrical operation to at least 673 K for 8h in air. At this temperature the contact resistivity of TaSi//2 and Al on beta -SiC decreased by a factor of two and ten, respectively. Contacts of Au were shown to be rectifying on n-type beta -SiC with a barrier height of 1. 20V.