Papers Published

  1. Kong, H.S. and Glass, J.T. and Davis, R.F., Epitaxial growth of β-SiC thin films on 6H α-SiC substrates via chemical vapor deposition, Appl. Phys. Lett. (USA), vol. 49 no. 17 (1986), pp. 1074 - 6 [1.97479] .
    (last updated on 2007/04/17)

    Epitaxial films of cubic β-SiC(111) have been grown via chemical vapor deposition at 1683K on (0001) substrates of hexagonal 6H α-SiC. Optical microscopy of the surface indicated that a decrease in the ratio of the sum of the C and Si source gases to the H2 carrier gas changed the crystallization behavior from polycrystalline to monocrystalline. Cross-sectional transmission electron microscopy showed almost no line or planar defects at the substrate/film interface and very few defects within the bulk of the film

    semiconductor epitaxial layers;semiconductor growth;semiconductor materials;silicon compounds;transmission electron microscope examination of materials;vapour phase epitaxial growth;