Papers Published

  1. Goeller, P.T. and Wang, Z. and Sayers, D.E. and Glass, J.T. and Nemanich, R.J., Epitaxial films of cobalt disilicide (100) evaporated onto Si (100) from a mixed source, Silicide Thin Films - Fabrication, Properties, and Applications. Symposium (1996), pp. 511 - 16 .
    (last updated on 2007/04/17)

    Abstract:
    Thin films of (100) oriented CoSi2 have been electron beam evaporated onto Si(100) substrates from a mixed Co-Si target. A sharp c(2×2) low energy electron diffraction (LEED) pattern resulted after annealing the films to 800°C. Extended x-ray absorption fine structure (EXAFS) of the film indicated the phase to be CoSi2. Quantitative x-ray photoelectron spectroscopy (XPS) analysis revealed the surface of the film to be slightly Si rich, indicating the Si terminated CoSi2 variant. Analysis of transmission electron microscope (TEM) diffraction patterns also provided evidence of the (100) orientation of the film

    Keywords:
    annealing;cobalt compounds;electron beam deposition;EXAFS;low energy electron diffraction;metallic epitaxial layers;semiconductor-metal boundaries;transmission electron microscopy;X-ray photoelectron spectra;