- Stoner, B.R. and Ma, G.H. and Wolter, S.D. and Zhu, W. and Wang, Y.-C. and Davis, R.F. and Glass, J.T., Epitaxial nucleation of diamond on β-SiC via bias-enhanced microwave plasma chemical vapor deposition,
Diamond and Related Materials, vol. 2 no. 2-4 pt 1
pp. 142 - 146 [0925-9635(93)90045-4] .
(last updated on 2007/04/17)
Diamond has been successfully nucleated on mirror finish single-crystal β-SiC films via bias-enhanced microwave plasma chemical vapor deposition. Initial scanning electron microscopy indicated that approximately 50% of the diamond grains were oriented relative to the SiC substrate. Further, high resolution cross-sectional transmission electron microscopy (TEM) and electron diffraction confirmed that the diamond was in epitaxial alignment with the silicon carbide, with the D(100)//SiC(100) and D[Left angle bracket]110[Right Angle Bracket]//SiC[Left angle bracket]110[Right Angle Bracket]. The high resolution TEM also revealed an approximate 5° tilt about [Left angle bracket]110[Right Angle Bracket] towards [Left angle bracket]110[Right Angle Bracket]. This tilting is believed to be the result of the high density of misfit dislocations at the interface. Speculations on the role of biasing in the promotion of epitaxial diamond nucleation on a foreign substrate are also discussed.
Chemical vapor deposition;Epitaxial growth;Crystal orientation;Dislocations (crystals);Interfaces (materials);Silicon carbide;Substrates;Electron diffraction;Scanning electron microscopy;Transmission electron microscopy;