Papers Published

  1. Liu, W. and Yang, P.C. and Tucker, D.A. and Wolden, C.A. and Davis, R.F. and Glass, J.T. and Prater, J.T. and Sitar, Z., TEM analysis of the observed phases during the growth of oriented diamond on nickel substrates, III-Nitride, SiC and Diamond Materials for Electronic Devices. Symposium (1996), pp. 457 - 62 .
    (last updated on 2007/04/17)

    Abstract:
    Transmission electron microscopy (TEM) was used to investigate the interfacial microstructures and phases involved in the nucleation and growth of the oriented diamond on Ni substrates by a multi-step growth process. A molten surface layer is formed during the process, which appears to be critical for both promotion of the diamond nucleation and suppression of graphite formation. Cross-section TEM analysis revealed that a polycrystalline nickel carbide interfacial structure exists between the diamond particles and the single crystal Ni substrate. X-ray diffraction analysis (XRD) identified the carbide phase as Ni4C. It is suggested that the Ni4C is formed in the molten layer and stabilizes sp3C precursor for diamond nucleation

    Keywords:
    diamond;elemental semiconductors;interface structure;nucleation;semiconductor epitaxial layers;semiconductor growth;transmission electron microscopy;vapour phase epitaxial growth;