Papers Published

  1. Kim, H.J. and Edmond, J.A. and Ryu, J. and Kong, H. and Carter, C.H. Jr. and Glass, J.T. and Davis, R.F., Epitaxial growth, doping and analytical characterization of monocrystalline beta-SiC semiconductor thin flims, International SAMPE Symposium and Exhibition, vol. 1 (1987), pp. 370 - 381 .
    (last updated on 2007/04/17)

    High purity monocrystalline β-SiC films have been grown on Si (100) and α-SiC (0001) at 1660K and 0.1 MPa using SiH4 and C2H4 carried in H2. Films produced on Si (100) have also been doped with B or Al (p-type) or P or N (n-type) at LN, room and elevated temperatures. Films grown on Si contain concentrations of line and planar defects, especially in the interface region; those produced on α-SiC are virtually defect-free. The ratios of ionized dopant concentration to total dopant concentration for N, P, B and Al are 0.1, 0.2, 0.002 and 0.01, respectively. The solubility limits of N, P, and B at 1660K were determined to be approximately 2×1020, 1×1018, and 8×1018 cm-3, respectively; that of Al exceeds 2×1019 cm-3. High temperature ion implantation and dynamic and post annealing procedures result in a small concentration of defects in the implanted region, in contrast to similar research at low temperatures.

    Semiconducting Films;Silicon Carbide;Crystals--Epitaxial Growth;