- Tachibana, T. and Glass, J. T. and Thompson, D. G., TITANIUM CARBIDE RECTIFYING CONTACTS ON BORON-DOPED POLYCRYSTALLINE DIAMOND,
Diamond and Related Materials, vol. 2 no. 1
pp. 37--40 .
(last updated on 2012/07/09)
TiC contacts on B-doped polycrystalline diamond were studied. The as-deposited TiC formed rectifying contacts with a reverse leakage current of 0.4μA at 5 V. After the contacts had been annealed at 850°C at a vacuum of approximately 1 × 10MIN@8 Torr, the current-voltage (I-V) characteristics of the contacts changed little and the rectifying nature was retained. The primary observable change was that the leakage current at 5 V reverse bias increased from 0.4 to 0.7 μA. The thermal stability of the rectify contacts was attributed to the chemically non-reactive interface between the diamond and TiC.
Titanium compounds;Crystals;Boron;Doping (additives);Electric properties;