- Stoner, B.R. and von Windheim, J.A. and Glass, J.T. and Zoltan, D. and Vandersande, J.W., Electrical conductivity as a function of temperature of diamond films grown by downstream microwave plasma chemical vapor deposition,
Novel Forms of Carbon Symposium
pp. 413 - 18 .
(last updated on 2007/04/17)
Electrical conductivity measurements were used to study the effects that sample distance from the plasma during growth has on the carrier transport properties of undoped CVD diamond. The films were grown by downstream microwave plasma chemical vapor deposition at distances from 0.5 to 2.0 cm from the edge of plasma glow. Electrical conductivity measurements were performed between room temperature and 1000°C to gain a better understanding of the CVD growth process and the resulting electrical properties of the diamond films. Room temperature electrical conductivity was found to vary by over 5 orders of magnitude with increasing growth distance from the plasma, and this is attributed to decreasing hydrogen incorporation efficiencies at further distances from the plasma
diamond;electronic conduction in crystalline semiconductor thin films;elemental semiconductors;plasma CVD coatings;