Papers Published

  1. Lee, Y.H. and Richard, P.D. and Bachmann, K.J. and Glass, J.T., Bias-controlled chemical vapor deposition of diamond thin films, Appl. Phys. Lett. (USA), vol. 56 no. 7 (1990), pp. 620 - 2 [1.102716] .
    (last updated on 2007/04/17)

    The growth of diamond films on (001) Si substrates by bias-controlled chemical vapor deposition is described. The film quality as judged by Raman spectroscopy and scanning electron microscopy depends strongly on the biasing conditions. Under low current reverse bias conditions, highly facetted cubo-octahedral diamond growth exhibiting a single sharp Raman line at 1332 cm-1 was obtained, while biasing in high current conditions which created a plasma resulted in multiply twinned, microcrystalline growth incorporating sp2-bonded carbon into the diamond film

    chemical vapour deposition;diamond;elemental semiconductors;Raman spectra of inorganic solids;scanning electron microscope examination of materials;semiconductor thin films;