Papers Published
- N. Li and T. Y. Tan and U. Gosele, Transition region width of nanowire hetero- and pn-junctions grown using vapor-liquid-solid processes,
Applied Physics A-materials Science & Processing, vol. 90 no. 4
(March, 2008),
pp. 591 -- 596 .
(last updated on 2009/08/04)Abstract:
The transition region width of nanowire heterojunctions and pn-junctions grown using vapor-liquid-solid (VLS) processes has been modeled. With two constituents or dopants I and II, the achievable width or abruptness of the junctions is attributed to the residual I atom/molecule stored in the liquid droplet at the onset of introducing II to grow the junction, and the stored I atom/molecule consumption into the subsequently grown crystal layers. The model yields satisfactory quantitative fits to a set of available Si-Ge junction data. Moreover, the model provides a satisfactory explanation to the relative junction width or abruptness differences between elemental and compound semiconductor junction cases, as well as a guideline for achieving the most desirable pn-junction widths.