Papers Published

  1. Tan, T.Y. and Chen, C.-H. and Gosele, U. and Scholz, R., Fermi-level effect, electric field effect, and diffusion mechanisms in GaAs based III-V compound semiconductors, Diffusion Mechanisms in Crystalline Materials. Symposium (1998), pp. 321 - 33 .
    (last updated on 2007/04/10)

    Diffusion mechanisms and point defects in GaAs and related III-V compounds are discussed. An understanding of the As sublattice situation has been arrived at fairly recently and is presently tentative. Understanding of the Ga sublattice situation has become more acceptable in that experimental results are consistently explained by the Fermi-level effect and the As4 pressure effect. On the Ga sublattice, though controversies still exist, some are readily resolved by noting the role of the electric field produced by semiconductor electrical junctions, physical junctions, and surfaces

    electromigration;Fermi level;gallium arsenide;III-V semiconductors;phase diagrams;self-diffusion;semiconductor junctions;vacancies (crystal);