- Goesele, U. and Tan, T. Y., OXYGEN DIFFUSION AND THERMAL DONOR FORMATION IN SILICON.,
Applied Physics A: Solids and Surfaces, vol. A28 no. 2
pp. 79 - 92 .
(last updated on 2007/04/10)
The information available on the diffusion of oxygen and on the formation of thermal donors in silicon is critically reviewed. In this context the effects of intrinsic point defects on the diffusion-controlled growth of oxygen precipitates is investigated in some detail. Seemingly contradictory experimental results on the diffusivity of oxygen in silicon at temperatures around 400 degree C are explained in terms of fast-diffusing gas-like molecular oxygen in silicon. The concept of molecular oxygen is also invoked in a newly suggested model of thermal donor formation in silicon. The diffusivity of molecular oxygen in silicon is estimated to be around 10** minus **9 cm**2s** minus **1 at 450 degree C, almost nine orders of magnitude higher than the diffusivity of atomic oxygen in interstitial position.