Papers Published

  1. Jianxing Li and Woun-Suck Yang and Tan, T.Y., Enhancement of gold solubility in silicon wafers, J. Appl. Phys. (USA), vol. 71 no. 1 (1992), pp. 527 - 9 [1.350693] .
    (last updated on 2007/04/10)

    Abstract:
    Edge-defined film-fed grown silicon wafers with a thin Au film deposited on one side were annealed at 950°C for various times. Spreading resistance probe measurements showed that at the wafer free surface the Au concentration was higher than the Au solubility in silicon found at the Au source side. Scanning electron microscopy, transmission electron microscopy, and energy-dispersive spectroscopy investigations revealed Au particles of nanometer size at the wafer free surface. The enhancement of the Au solubility at the wafer free surface is attributed to the existence of these small Au particles

    Keywords:
    annealing;crystal growth from melt;diffusion in solids;electronic conduction in crystalline semiconductor thin films;elemental semiconductors;gold;impurities;particle size;scanning electron microscope examination of materials;semiconductor thin films;silicon;solid solubility;transmission electron microscope examination of materials;X-ray chemical analysis;