Papers Published

  1. Taylor, W.J. and Gosele, U.M. and Tan, T.Y., Co-precipitation of carbon and oxygen in silicon: the dominant flux criterion, Jpn. J. Appl. Phys. 1, Regul. Pap. Short Notes (Japan), vol. 32 no. 11A (1993), pp. 4857 - 62 .
    (last updated on 2007/04/10)

    Abstract:
    Due to the need of relieving the strain associated with the formation of SiO2 precipitates in silicon, co-precipitation of carbon with oxygen in silicon wafers may involve a large number of atomic and point defect species: oxygen, carbon, vacancies, and silicon self-interstitials. This allows many parallel mechanisms for strain relief to occur. In the present paper we first reason that this complex system may be reduced to that involving only three species: oxygen, carbon, and self-interstitials; and the strain relief mechanisms may be limited to two: that via self-interstitials and that involving carbon. We then propose a dominant (strain relief species) flux criteria to explain the behavior of carbon and oxygen co-precipitation in silicon. When the carbon flux is dominant, carbon should co-precipitate with oxygen. When the silicon self-interstitial flux is dominant, carbon should not co-precipitate with oxygen, even at high concentrations. Available data, spanning the temperature range of 450-1000°C and a carbon concentration range of from less than 0.5×1016 to 1×1018 cm-3, can be explained using this criterion

    Keywords:
    carbon;deformation;elemental semiconductors;interstitials;oxygen;precipitation;silicon;vacancies (crystal);