Papers Published

  1. Rimini, E. and Chu, W.-K. and Baglin, J.E.E. and Tan, T.Y. and Hodgson, R.T., Laser annealing of silicon implanted with both argon and arsenic, Appl. Phys. Lett. (USA), vol. 37 no. 1 (1980), pp. 81 - 3 [1.91711] .
    (last updated on 2007/04/10)

    Silicon samples implanted with both AR and As at fluences of 1×1016/cm2 were irradiated with Q-switched Nd:YAG double-frequency laser pulses. Reordering of the damaged layers occurs for 30- and 130-keV Ar implants at about 0.6 and 1.3 J/cm2, respectively. An Ar concentration of the order of (1-3)×1020 atoms/cm3 is retained, while good As substitutionality is observed. The presence of Ar atoms does not seem to inhibit the As-Si reordering during pulsed laser annealing, and likewise the As atoms do not seem to inhibit Ar out-diffusion. This behavior contrasts markedly with the strong coupling found in furnace annealing

    annealing;argon;arsenic;channelling;doping profiles;elemental semiconductors;ion implantation;laser beam effects;semiconductor doping;silicon;transmission electron microscope examination of materials;