Papers Published

  1. Tan, T.Y., Exigent-accommodation-volume of precipitation and formation of oxygen precipitates in silicon, Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon (1986), pp. 269 - 79 .
    (last updated on 2007/04/10)

    The author describes in some detail, the nature of an exigent-accommodation-volume factor associated with oxygen (Oi) precipitation in Czochralski (CZ) Si. This factor is regarded as a causal or characteristic factor which influences many aspects of the SiO2 precipitate nucleation and growth phenomena. Employing this factor, he then describes the possible explanations of two outstanding features of Oi precipitation in CZ Si the precipitation retardation/recovery phenomena and the nucleation incubation phenomena

    elemental semiconductors;nucleation;oxygen;precipitation;silicon;