Papers Published

  1. Hsia, S.L. and Tan, T.Y. and Smith, P.L. and McGuire, G.E., Arsenic diffusion and segregation behavior at the interface of epitaxial CoSi2 film and Si substrate, Silicides, Germanides, and Their Interfaces. Symposium (1994), pp. 409 - 14 .
    (last updated on 2007/04/10)

    Arsenic diffusion and segregation properties at the interface of the epitaxial CoSi2 and Si substrate have been studied. Samples have been prepared using Co-Ti bimetallic source materials and two types of (001) Si substrates: n+(doped by As to ~2×1019 cm-3) and p. For the n+ Si cases, the lower limit of the CoSi2 film formation temperature is increased by ~2000C to ~7000C. SIMS results showed As segregation into Si. For epitaxial CoSi2 film formation at 900°C, the As concentration has increased by a factor of ~2 within a distance of ~30 nm from the interface, while the incorporated As in the film is ~30-50 times less than that in Si. For p-type Si substrate cases, the epitaxial CoSi2 film was first grown and followed by As+ implantation (into the film) and drive-in processes. It is observed that As was segregated to the CoSi2-Si interface and diffused into Si. This is in qualitative agreement with our results obtained from the n+ substrate experiments and the results of other authors involving the use of polycrystalline CoSi2 films. In the present cases, all implanted As were conserved at a drive in-temperature of 1000°C for up to 100 s. This is in contrast to the polycrystalline CoSi2 film results which involve a substantial As loss to the film free surfaces. The physical reasons of this difference have been discussed

    arsenic;cobalt compounds;elemental semiconductors;integrated circuit metallisation;interface structure;ion implantation;secondary ion mass spectra;semiconductor-metal boundaries;silicon;surface diffusion;surface segregation;