Papers Published

  1. Schroer, E. and Hopfe, S. and Werner, P. and Gosele, U. and Duscher, G. and Ruhle, M. and Tan, T.Y., Oxide precipitation at silicon grain boundaries, Appl. Phys. Lett. (USA), vol. 70 no. 3 (1997), pp. 327 - 9 [1.118405] .
    (last updated on 2007/04/10)

    Abstract:
    Oxygen precipitates at various grain boundaries in crystalline silicon, formed after prolonged high temperature annealing, grow within a narrow size distribution. This narrow size distribution appears to depend on the specific grain boundary. On the basis of this observation a model is derived which is based on the energy balance between grain boundary energy, Si/SiO2 interface energy, and an additional term describing the energy of the ledges of the faceted precipitates. This model predicts an energy minimum for a defined size of the precipitates

    Keywords:
    annealing;elemental semiconductors;grain boundaries;grain boundary segregation;oxygen;precipitation;silicon;surface energy;