- Tan, T.Y. and Garnder, E.E. and Tice, W.K., Intrinsic gettering by oxide precipitate induced dislocations in Czochralski Si,
Appl. Phys. Lett. (USA), vol. 30 no. 4
pp. 175 - 6 [1.89340] .
(last updated on 2007/04/10)
Oxygen in silicon has a hardening effect when SiO2 precipitates are formed, prismatic dislocations are generated in the Si matrix and these can getter metallic impurities and result in an improved leakage-limited yield of devices. Experiments on wafers of Czochralski-grown silicon are reported and the conditions for the effectiveness of the gettering are critically examined
dislocation etching;elemental semiconductors;impurity-dislocation interactions;precipitation hardening;prismatic dislocations;silicon;