Papers Published

  1. Tan, T.Y. and Ginsberg, B.J., Observation of oxidation-enhanced and -retarded diffusion of antimony in silicon: the behavior of (111) wafers, Defects in Semiconductors II, Symposium Proceedings (1983), pp. 141 - 5 .
    (last updated on 2007/04/10)

    An experiment was performed to study the oxidation-enhanced and -retarded diffusion (OED and ORD) of Sb in silicon wafers oxidized in dry O2 at 1160°C. The ORD data of (100) wafers agree well with the prediction of a model assuming that Si self-interstitials (I) and velocities (V) coexist in thermal equilibrium at high temperatures. An adjustment of the I supersaturation values is needed to bring the ORD/OED data of (111) wafers to fit with the model satisfactorily. This indicates the existence of a mechanism which injects V into (111) wafers in addition to the normal mechanism of I injection due to SiO2 growth

    antimony;diffusion in solids;elemental semiconductors;interstitials;oxidation;silicon;vacancies (crystal);