Papers Published

  1. Egger, U. and Schultz, M. and Werner, P. and Breitenstein, O. and Tan, T.Y. and Gosele, U. and Franzheld, R. and Uematsu, M. and Ito, H., Interdiffusion studies in GaAsP/GaAs and GaAsSb/GaAs superlattices under various arsenic vapor pressures, J. Appl. Phys. (USA), vol. 81 no. 9 (1997), pp. 6056 - 61 [1.364453] .
    (last updated on 2007/04/10)

    Interdiffusion coefficients on the group V sublattice of GaAs were determined in GaAsP/GaAs and GaAsSb/GaAs superlattices. Strained GaAs0.86P0.14/GaAs, GaAs0.8P0.2/GaAs0.975P0.025 and GaAs0.98Sb0.02/GaAs superlattices were annealed between 850°C and 1100°C under different arsenic vapor pressures. The diffusion coefficient was measured by secondary ion mass spectroscopy and cathodoluminescence spectroscopy. The interdiffusion coefficient was higher under arsenic-rich conditions than under gallium-rich conditions, pointing to an interstitial-substitutional type of diffusion mechanism

    annealing;cathodoluminescence;chemical interdiffusion;gallium arsenide;gallium compounds;III-V semiconductors;interstitials;secondary ion mass spectra;semiconductor superlattices;surface diffusion;