- Egger, U. and Schultz, M. and Werner, P. and Breitenstein, O. and Tan, T.Y. and Gosele, U. and Franzheld, R. and Uematsu, M. and Ito, H., Interdiffusion studies in GaAsP/GaAs and GaAsSb/GaAs superlattices under various arsenic vapor pressures,
J. Appl. Phys. (USA), vol. 81 no. 9
pp. 6056 - 61 [1.364453] .
(last updated on 2007/04/10)
Interdiffusion coefficients on the group V sublattice of GaAs were determined in GaAsP/GaAs and GaAsSb/GaAs superlattices. Strained GaAs0.86P0.14/GaAs, GaAs0.8P0.2/GaAs0.975P0.025 and GaAs0.98Sb0.02/GaAs superlattices were annealed between 850°C and 1100°C under different arsenic vapor pressures. The diffusion coefficient was measured by secondary ion mass spectroscopy and cathodoluminescence spectroscopy. The interdiffusion coefficient was higher under arsenic-rich conditions than under gallium-rich conditions, pointing to an interstitial-substitutional type of diffusion mechanism
annealing;cathodoluminescence;chemical interdiffusion;gallium arsenide;gallium compounds;III-V semiconductors;interstitials;secondary ion mass spectra;semiconductor superlattices;surface diffusion;